| URN | etd-0726119-213056 | Statistics | This thesis had been viewed 195 times. Download 0 times. |
| Author | Chien-Hung Chang | ||
| Author's Email Address | No Public. | ||
| Department | Technology for electrical engineering | ||
| Year | 2018 | Semester | 2 |
| Degree | Master | Type of Document | Master's Thesis |
| Language | zh-TW.Big5 Chinese | Page Count | 30 |
| Title | Characteristic Analysis of Aluminum Gallium Nitride Films with Different Aluminum Contents |
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| Abstract | The aluminum gallium nitride film is an optoelectronic semiconductor material with high thermal stability and wide energy gap characteristics from 3.4 to 6.2 eV, so it can be applied to high power, high speed optoelectronic components; or applied to the wavelength of far ultraviolet to excite The light source in the blue to ultraviolet region is generated to form a light emitting diode. In order to further analyze the characteristics of aluminum gallium nitride film, this paper will measure the concentration of different aluminum in aluminum gallium nitride film (4%, 13%, 17% and 22%) using four-point probe equipment. The resistance characteristics, X-ray diffraction analysis to detect the change of the diffraction peak and the Hall effect measurement measured the carrier concentration and mobility rate and other measurements to analyze the correlation characteristics of different aluminum concentration of aluminum gallium nitride film. |
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| Files | indicate in-campus access at 5 years and off-campus access at 5 years | ||
| Date of Defense | 2019-07-26 | Date of Submission | 2019-07-30 |